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Descr: | . Electronic Components Datasheets Active components Transistors ST std27n3lh5_stp27n3lh5_stu27n3lh5.pdf |
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File name std27n3lh5_stp27n3lh5_stu27n3lh5.pdf STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 27 A, DPAK, IPAK, TO-220 , STripFETTM V Power MOSFET Features Type VDSS RDS(on) max ID 0.019 3 3 STD27N3LH5 30 V 27 A 1 2 STP27N3LH5 30 V 0.020 27 A 1 IPAK DPAK STU27N3LH5 30 V 0.020 27 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge 3 High avalanche ruggedness 2 1 TO-220 Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram D (TAB or 2) Description This STripFETTMV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). G (1) S (3) sc08440 Table 1. Device summary Order codes Marking Package Packaging STD27N3LH5 27N3LH5 DPAK Tape and reel STU27N3LH5 27N3LH5 IPAK Tube STP27N3LH5 27N3LH5 TO-220 Tube May 2009 Doc ID 15617 Rev 2 1/17 www.st.com 17 Contents STD27N3LH |
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